Strain assisted spin torque switching spin transfer torque memory
US10263036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2014 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Sep 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Described is an apparatus which comprises: a magnetic tunneling junction (MTJ) having a free magnetic layer; a piezoelectric layer; and a conducting strain transfer layer coupled to the free magnetic layer and the piezoelectric layer. Described is a method, which comprises: exciting a piezoelectric layer with a voltage driven capacitive stimulus; and writing to a MTJ coupled to the piezoelectric layer via a strain assist layer. Described is also an apparatus which comprises: a transistor; a conductive strain transfer layer coupled to the transistor; and a MTJ device having a free magnetic layer coupled to the conductive strain transfer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.