Method of manufacturing semiconductor device
US10263071B2 · kind B2 · utility
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2References
7Claims
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Assignee
Inventors
Key dates
| Filing date | Dec 26, 2017 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Dec 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes: forming a trench on a surface of a semiconductor substrate; forming an oxide film on side surfaces and a bottom surface of the trench; removing at least a part of the oxide film by dry etching from the bottom surface of the trench; and ion-implanting conductive impurities into the semiconductor substrate through the bottom surface of the trench after the dry etching. The dry etching is reactive ion etching in which etching gas including fluorocarbon based gas having a carbon atom ring structure, oxygen gas, and argon gas is used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.