Optoelectronic semiconductor device and fabrication method thereof
US10263093B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2018 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Mar 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/85
Abstract
An optoelectronic semiconductor includes a carrier, a semiconductor main body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer for generating electromagnetic radiation, the semiconductor main body having at least one recess extending through the radiation emitting layer; a first electrode and a second electrode; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the second electrode and extending through the recess from the carrier to the second semiconductor layer; and a zener diode structure disposed between the first electrical connection layer and the second electrical connection layer so that the first electrical connection layer and the second electrical connection layer are electrically dependent, wherein at least a portion of the zener diode structure is located in a current path between the first electrode and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.