Wei-Yu Yen
25Patents
4h-index
27Co-inventors
59Inventor score
Filing activity: Oct 22, 2009 → Mar 12, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| USD730303S1 | LED chip | General | 14 | Active |
| US8519430B2 | Optoelectronic device and method for manufacturing the same | Emerging Cross-Sectional Technologies | 13 | Active |
| USD729752S1 | LED chip | General | 8 | Active |
| US8344392B2 | Light-emitting element and the manufacturing method thereof | Electricity | 7 | Active |
| US8546831B1 | Reflection convex mirror structure of a vertical light-emitting diode | Electricity | 4 | Active |
| US9224911B2 | Method for separating light-emitting diode from a substrate | Electricity | 2 | Active |
| US8704252B2 | Light emitting device | Electricity | 2 | Active |
| US8766303B2 | Light-emitting diode with a mirror protection layer | Electricity | 1 | Active |
| US10243108B1 | Light emitting diode having continuous electrode structure | Electricity | 1 | Active |
| US8896007B2 | Semiconductor light-emitting device and fabricating method thereof | Electricity | 1 | Active |
| US9214601B1 | Electroluminescent and photoluminescent multiband white light emitting diode | Electricity | 1 | Active |
| US9893254B1 | Structure of high temperature resistant reflecting layer of light-emitting diode | Electricity | 1 | Active |
| US9196798B2 | Semiconductor light-emitting device and fabricating method thereof | Electricity | 1 | Active |
| US8716740B1 | Electrode structure for an LED | Electricity | 1 | Active |
| US9401465B2 | Light emitting diode having mirror protection layer and method for manufacturing mirror protection layer | Electricity | 0 | Active |
| US10930831B2 | Light emitting chip and fabrication method thereof | Electricity | 0 | Active |
| US10541512B2 | Surface emitting laser luminescent diode structure | Electricity | 0 | Active |
| US9502621B2 | High energy invisible light light emitting diode having safety indication | Electricity | 0 | Active |
| US9263641B2 | Light emitting diodes | Electricity | 0 | Active |
| US8552457B1 | Thermal stress releasing structure of a light-emitting diode | Electricity | 0 | Active |
| US10263093B2 | Optoelectronic semiconductor device and fabrication method thereof | Electricity | 0 | Active |
| US8748928B2 | Continuous reflection curved mirror structure of a vertical light-emitting diode | Electricity | 0 | Active |
| US8754439B2 | Light-emitting element and the manufacturing method thereof | Electricity | 0 | Active |
| US8816379B2 | Reflection curved mirror structure of a vertical light-emitting diode | Electricity | 0 | Active |
| US8884323B2 | Semiconductor light-emitting device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.