Multijunction photovoltaic device having SiGe(Sn) and (In)GaAsNBi cells
US10263129B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 14, 2012 |
| Grant date | Apr 16, 2019 |
| Priority date | — |
| Expiry date | Apr 21, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A multijunction tandem photovoltaic device is disclosed having a bottom subcell of silicon germanium or silicon germanium tin material and above that a subcell of gallium nitride arsenide bismide, or indium gallium nitride arsenide bismide, material. The materials are lattice matched to gallium arsenide, which preferably forms the substrate. Preferably, further lattice matched subcells of gallium arsenide, indium gallium phosphide and aluminum gallium arsenide or aluminum indium gallium phosphide are provided.
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