Patent assignee · GB · COMPANY

IQE plc

28Patents
27Active
28Granted
52Portfolio score

Filing activity: Jun 6, 2002 → Nov 1, 2022

Most-cited patents

PatentTitleAreaCited byStatus
US6698728B1 Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites Chemistry; Metallurgy 23 Expired
US9768339B2 Optoelectronic detectors having a dilute nitride layer on a substrate with a lattice parameter nearly matching GaAs Emerging Cross-Sectional Technologies 7 Active
US10605987B2 Re-based integrated photonic and electronic layered structures Electricity 4 Active
US10566944B2 Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride Electricity 2 Active
US9917156B1 Nucleation layer for growth of III-nitride structures Electricity 2 Active
US10075143B2 Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride Electricity 2 Active
US11063114B2 III-N to rare earth transition in a semiconductor structure Electricity 1 Active
US11495670B2 Integrated epitaxial metal electrodes Electricity 0 Active
US10573686B2 Epitaxial AIN/cREO structure for RF filter applications Electricity 0 Active
US11133408B2 Dielectric passivation for layered structures Electricity 0 Active
US11757008B2 Electronic device with 2-dimensional electron gas between polar-oriented rare-earth oxide layer grown over a semiconductor Electricity 0 Active
US10263129B2 Multijunction photovoltaic device having SiGe(Sn) and (In)GaAsNBi cells Emerging Cross-Sectional Technologies 0 Active
US12382690B2 Structure and method using a single crystalline bixbyite oxide layer in a orientation Electricity 0 Active
US10615141B2 Pnictide buffer structures and devices for GaN base applications Electricity 0 Active
US10923345B2 Epitaxial metal oxide as buffer for epitaxial III-V layers Electricity 0 Active
US11133389B2 Pnictide nanocomposite structure for lattice stabilization Electricity 0 Active
US11201451B2 Porous distributed Bragg reflectors for laser applications Electricity 0 Active
US10367107B2 Multijunction photovoltaic device having an Si barrier between cells Emerging Cross-Sectional Technologies 0 Active
US11355340B2 Semiconductor material having tunable permittivity and tunable thermal conductivity Electricity 0 Active
US12408503B2 Layered structure with deformation control layer Electricity 0 Active
US11611001B2 Localized strain fields in epitaxial layer over cREO Electricity 0 Active
US11251320B2 Photodetector structures formed on high-index substrates Electricity 0 Active
US10128350B2 Integrated epitaxial metal electrodes Electricity 0 Active
US11069825B2 Optoelectronic devices formed over a buffer Electricity 0 Active
US10418457B2 Metal electrode with tunable work functions Electricity 0 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.