Patent · US Active

Method for producing a solar cell involving doping by ion implantation and depositing an outdiffusion barrier

US10263135B2 · kind B2 · utility

0Cited by

1References

11Claims

0Family size

Assignee

ION BEAM SERVICES · FR

Inventors

Tim Boescke · Dresden, DE
Daniel KANIA · Erfurt, DE
Claus Schoellhorn · Frankfurt, DE

Key dates

Filing date	Aug 5, 2014
Grant date	Apr 16, 2019
Priority date	—
Expiry date	Aug 5, 2034

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for producing a solar cell (1) from crystalline semiconductor material, wherein a first doping region (5) is formed by means of ion implantation (S2) of a first dopant in a first surface (3a) of a semiconductor substrate (3), and a second doping region (7) is formed by means of ion implantation (S3) or thermal indiffusion of a second dopant in the second surface (3b) of the semiconductor substrate. After the doping of the second surface, a cap (9b) acting as an outdiffusion barrier for the second dopant is applied and an annealing step (S4) is subsequently carried out.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.