Semiconductor chip

US10263143B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Xue Wang · Regensburg, DE
• Markus Broell · Cork, IE
• Stefan Barthel · Regensburg, DE

Key dates

• Filing date: Apr 9, 2018
• Grant date: Apr 16, 2019
• Expiry date: Apr 9, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/824

Abstract

A semiconductor chip (20) is described comprising a semiconductor layer sequence (10) based on a phosphide compound semiconductor material or arsenide compound semiconductor material wherein the semiconductor layer sequence (10) contains a p-type semiconductor region (4) and an n-type semiconductor region (2). The n-type semiconductor region (2) comprises a superlattice structure (20) for improving current spreading, wherein the superlattice structure (20) has a periodic array of semiconductor layers (21, 22, 23, 24). A period of the superlattice structure (20) has at least one undoped first semiconductor layer (21) and a doped second semiconductor layer (22), wherein an electronic band gap E2 of the doped second semiconductor layer (22) is larger than an electronic band gap E1 of the undoped first semiconductor layer (21).