Method of forming a semiconductor device using layered etching and repairing of damaged portions
US10269564B2 · kind B2 · utility
3Cited by
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20Claims
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Key dates
| Filing date | Oct 5, 2017 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Oct 5, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B32/186
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.