Si-Chen Lee
39Patents
6h-index
46Co-inventors
69Inventor score
Filing activity: Jun 30, 1992 → Jan 10, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5351309A | Image edge sensor | Emerging Cross-Sectional Technologies | 39 | Expired |
| US7192818B1 | Polysilicon thin film fabrication method | Electricity | 32 | Expired |
| US5717201A | Double four-quadrant angle-position detector | Electricity | 20 | Expired |
| US6375737B2 | Method of self-assembly silicon quantum dots | Electricity | 10 | Expired |
| US5506006A | Process for depositing silicon dioxide by liquid phase diposition | Electricity | 10 | Expired |
| US6909108B2 | Structure of quantum dot light emitting diode and method of fabricating the same | Emerging Cross-Sectional Technologies | 8 | Expired |
| US5903047A | Low temperature-deposited passivation film over semiconductor device | Emerging Cross-Sectional Technologies | 6 | Expired |
| US6774014B1 | Method of fabricating spherical quantum dots device by combination of gas condensation and epitaxial technique | Emerging Cross-Sectional Technologies | 5 | Expired |
| US9859115B2 | Semiconductor devices comprising 2D-materials and methods of manufacture thereof | Electricity | 3 | Active |
| US10269564B2 | Method of forming a semiconductor device using layered etching and repairing of damaged portions | Chemistry; Metallurgy | 3 | Active |
| US9570301B2 | Projection patterning with exposure mask | Electricity | 3 | Active |
| US6787434B1 | Method of fabricating polysilicon film by nickel/copper induced lateral crystallization | Electricity | 2 | Expired |
| US9146191B2 | Gas detection system and radiation emitting device for the gas detection system | Physics | 1 | Active |
| US9520514B2 | Quantum dot infrared photodetector | Electricity | 1 | Active |
| US10269902B2 | Semiconductor device and method of formation | Electricity | 1 | Active |
| US9525072B2 | Semiconductor device and method of formation | Electricity | 1 | Active |
| US8900879B2 | Sensor for detection of a target of interest | Physics | 1 | Active |
| US8242527B2 | Light emitting device and method of manufacturing the same | Electricity | 0 | Active |
| US9853105B2 | Semiconductor device and method of formation | Electricity | 0 | Active |
| US9112073B2 | Photo detector | Physics | 0 | Active |
| US11211460B2 | 2D crystal hetero-structures and manufacturing methods thereof | Electricity | 0 | Active |
| US9346196B2 | Method for manufacturing flexible substrate with surface structure copying from a template | Emerging Cross-Sectional Technologies | 0 | Active |
| US10541132B2 | Forming semiconductor structures with two-dimensional materials | Electricity | 0 | Active |
| US8795928B2 | Wave-shaped mask of fabricating nano-scaled structure | Physics | 0 | Active |
| US12266602B2 | Integrated circuit structure and method for forming the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.