Method of manufacturing semiconductor device
US10269579B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2018 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Feb 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes providing a substrate including a silicon oxide layer and a metal oxide layer covering the silicon oxide layer. A CMP slurry is prepared. The CMP slurry includes plural abrasive particles bearing negative charges, a Lewis base including a (XaYb)− group, and a buffer solution. The X represents a IIIA group element or an early transitional metal, and Y represents a pnictogen element, a chalcogen element or a halogen element. The CMP slurry has a pH in a range substantially from 2 to 7. Next, a planarization operation is performed on a surface of the metal oxide layer until a surface of the silicon oxide layer exposed. The planarization operation has a high polishing selectivity of the metal oxide layer with respect to the silicon oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.