Chen-Hao Wu
30Patents
3h-index
15Co-inventors
56Inventor score
Filing activity: Apr 1, 2008 → Jul 24, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8763969B2 | Foldable display support | Mechanical Engineering; Lighting; Heating | 12 | Active |
| US11004794B2 | Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereof | Electricity | 3 | Active |
| US10714395B2 | Fin isolation structure for FinFET and method of forming the same | Electricity | 3 | Active |
| US7841051B2 | Dual swing hinge structure | Fixed Constructions | 3 | Active |
| US11389928B2 | Method for conditioning polishing pad | Performing Operations; Transporting | 1 | Active |
| US11120995B2 | Method for forming multi-layer mask | Electricity | 1 | Active |
| US11495471B2 | Slurry compositions for chemical mechanical planarization | Electricity | 1 | Active |
| US10269579B1 | Method of manufacturing semiconductor device | Electricity | 0 | Active |
| US11776910B2 | Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereof | Electricity | 0 | Active |
| US12261055B2 | Slurry compositions for chemical mechanical planarization | Electricity | 0 | Active |
| US10998239B2 | Fin isolation structure for FinFET and method of forming the same | Electricity | 0 | Active |
| US11267987B2 | Chemical mechanical polishing slurry composition and method of polishing metal layer | Electricity | 0 | Active |
| US10920105B2 | Materials and methods for chemical mechanical polishing of ruthenium-containing materials | Electricity | 0 | Active |
| US10510555B2 | Mechanism for manufacturing semiconductor device | Electricity | 0 | Active |
| US11688644B2 | Fin isolation structure for FinFET and method of forming the same | Electricity | 0 | Active |
| US10727076B2 | Slurry and manufacturing semiconductor using the slurry | Chemistry; Metallurgy | 0 | Active |
| US12176217B2 | Method for manufacturing a semiconductor using slurry | Chemistry; Metallurgy | 0 | Active |
| US11756825B2 | Semiconductor structure with oxidized ruthenium | Electricity | 0 | Active |
| US12362281B2 | Partial barrier free vias for cobalt-based interconnects and methods of fabrication thereof | Electricity | 0 | Active |
| US10497574B2 | Method for forming multi-layer mask | Electricity | 0 | Active |
| US11752592B2 | Slurry enhancement for polishing system | Performing Operations; Transporting | 0 | Active |
| US10847410B2 | Ruthenium-containing semiconductor structure and method of manufacturing the same | Electricity | 0 | Active |
| US11688607B2 | Slurry | Chemistry; Metallurgy | 0 | Active |
| US11525072B2 | Materials and methods for chemical mechanical polishing of ruthenium-containing materials | Electricity | 0 | Active |
| US11942373B2 | Fin isolation structure for FinFET and method of forming the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.