Image tone-reversal with a dielectric using bottom-up cross-linking for back end of line (BEOL) interconnects
US10269623B2 · kind B2 · utility
9Cited by
3References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 22, 2015 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Jun 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Image tone-reversal with a dielectric using bottom-up cross-linking for back end of line (BEOL) interconnects is described. In an example, a semiconductor structure including a metallization layer includes a plurality of trenches in an interlayer dielectric (ILD) layer above a substrate. A pre-catalyst layer is on sidewalls of one or more, but not all, of the plurality of trenches. Cross-linked portions of a dielectric material are proximate the pre-catalyst layer, in the one or more of the plurality of trenches. Conductive structures are in remaining ones of the trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.