Rami Hourani
57Patents
3h-index
97Co-inventors
65Inventor score
Filing activity: Jun 27, 2013 → Apr 8, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10269623B2 | Image tone-reversal with a dielectric using bottom-up cross-linking for back end of line (BEOL) interconnects | Electricity | 9 | Active |
| US9530733B2 | Forming layers of materials over small regions by selective chemical reaction including limiting enchroachment of the layers over adjacent regions | Electricity | 6 | Active |
| US9899255B2 | Via blocking layer | Electricity | 5 | Active |
| US10366950B2 | Bottom-up selective dielectric cross-linking to prevent via landing shorts | Electricity | 3 | Active |
| US10396176B2 | Selective gate spacers for semiconductor devices | Electricity | 3 | Active |
| US10615117B2 | Self-aligned via | Electricity | 3 | Active |
| US10109583B2 | Method for creating alternate hardmask cap interconnect structure with increased overlay margin | Electricity | 2 | Active |
| US10243080B2 | Selective deposition utilizing sacrificial blocking layers for semiconductor devices | Electricity | 2 | Active |
| US11892771B2 | Methods for increasing the density of high-index nanoimprint lithography films | Performing Operations; Transporting | 1 | Active |
| US11850621B2 | Edge blackening for optical devices | Performing Operations; Transporting | 1 | Active |
| US10971600B2 | Selective gate spacers for semiconductor devices | Electricity | 1 | Active |
| US9418888B2 | Non-lithographically patterned directed self assembly alignment promotion layers | Electricity | 1 | Active |
| US11137681B2 | Lined photobucket structure for back end of line (BEOL) interconnect formation | Electricity | 1 | Active |
| US11011463B2 | Dielectric helmet-based approaches for back end of line (BEOL) interconnect fabrication and structures resulting therefrom | Electricity | 1 | Active |
| US10497613B2 | Microelectronic conductive routes and methods of making the same | Electricity | 1 | Active |
| US11869889B2 | Self-aligned gate endcap (SAGE) architectures without fin end gap | Electricity | 1 | Active |
| US12087836B2 | Contact over active gate structures with metal oxide-caped contacts to inhibit shorting | Electricity | 0 | Active |
| US10672650B2 | Via blocking layer | Electricity | 0 | Active |
| US11417567B2 | Conductive cap-based approaches for conductive via fabrication and structures resulting therefrom | Electricity | 0 | Active |
| US12109641B2 | Optical device having structural and refractive index gradation, and method of fabricating the same | Physics | 0 | Active |
| US12077860B2 | Doped amorphous optical device films and deposition via incorporation of dopant atoms | Physics | 0 | Active |
| US12044963B2 | High refractive index imprint compositions and materials and processes for making the same | Chemistry; Metallurgy | 0 | Active |
| US11955377B2 | Differential hardmasks for modulation of electrobucket sensitivity | Electricity | 0 | Active |
| US11335598B2 | Grating replication using helmets and topographically-selective deposition | Electricity | 0 | Active |
| US12080639B2 | Contact over active gate structures with metal oxide layers to inhibit shorting | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.