Semiconductor device and method of forming the same
US10269703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 16, 2017 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Feb 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/05572
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a first conductive line disposed on a substrate, a second conductive line disposed on the substrate, and the second conductive line separated with the first conductive line by a trench; an insulating layer disposed on the first conductive line and the second conductive line, and filled the trench between the first conductive line and the second conductive line; and a magnetic film having a first surface and a second surface opposite to the first surface, and the first surface disposed on the insulating layer; wherein the first surface has a first concave directly above the trench, and the first concave has a first obtuse angle of at least 170 degree.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.