Semiconductor device and manufacturing method of semiconductor device
US10269748B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2016 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Nov 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/13147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate provided with a through hole that extends therethrough from a first surface to a second surface on a side opposite to the first surface, a device layer provided at the first surface of the semiconductor substrate which includes an electrode, an insulating layer that covers the device layer, a first through electrode that extends through the insulating layer, an insulating layer that extends from the second surface of the semiconductor substrate to a bottom surface of the through hole through an inner surface of the through hole of the semiconductor substrate, and in which the portion thereof in contact with the bottom surface has a tapered shape, and a second through electrode electrically connected to the electrode in the device layer that is exposed to the bottom surface of the through hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.