Semiconductor device and a method for fabricating the same
US10269797B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2018 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Feb 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a fin field effect transistor. The semiconductor device includes a first gate electrode, a first source/drain (S/D) region disposed adjacent to the first gate electrode, a first S/D contact disposed on the first S/D region, a first spacer layer disposed between the first gate electrode and the first S/D region, a first contact layer in contact with the first gate electrode and the first S/D contact, and a first wiring layer integrally formed with the first contact layer. There is no interface between the first contact layer and the first wiring layer in a cross sectional view, and the first contact layer has a smaller area than the first wiring layer in plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.