Semiconductor device and manufacturing method thereof
US10269802B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 15, 2015 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | May 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0177
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes first and second Fin FETs and a separation plug made of an insulating material and disposed between the first and second Fin FETs. The first Fin FET includes a first fin structure extending in a first direction, a first gate dielectric formed over the first fin structure and a first gate electrode formed over the first gate dielectric and extending in a second direction perpendicular to the first direction. The second Fin FET includes a second fin structure, a second gate dielectric formed over the second fin structure and a second gate electrode formed over the first gate dielectric and extending in the second direction. When viewed from above, an end shape the separation plug has a concave curved shape, while an end of the first gate electrode abutting the separation plug has a convex curved shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.