Semiconductor device having a trench gate
US10269953B2 · kind B2 · utility
1Cited by
2References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2017 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Jan 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a gate structure extending from a first surface into a semiconductor portion and having a metal gate electrode and a gate dielectric separating the metal gate electrode from the semiconductor portion. An interlayer dielectric separates a first load electrode from the semiconductor portion, and includes a screen oxide layer thinner than the gate dielectric. A body zone and a source zone are formed in the semiconductor portion and directly adjoin the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.