Inventor · Villach, AT

David Laforet

32Patents
3h-index
35Co-inventors
59Inventor score

Filing activity: Jun 14, 2012 → Jan 30, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US8558308B1 Method of manufacturing a semiconductor device using a contact implant and a metallic recombination element and semiconductor Electricity 22 Active
US9680004B2 Power MOSFET with seperate gate and field plate trenches Electricity 5 Active
US10510846B2 Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region Electricity 3 Active
US9029974B2 Semiconductor device, junction field effect transistor and vertical field effect transistor Electricity 3 Active
US11158735B2 Charge compensation MOSFET with graded epi profile and methods of manufacturing thereof Electricity 2 Active
US9847395B2 Semiconductor device including a contact structure directly adjoining a mesa section and a field electrode Electricity 2 Active
US10566426B2 Forming silicon oxide layers by radical oxidation and semiconductor device with silicon oxide layer Electricity 2 Active
US9865726B2 Method of manufacturing a semiconductor device with trench gate by using a screen oxide layer Electricity 1 Active
US10727331B2 Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof Electricity 1 Active
US9287376B1 Method of manufacturing a gate trench with thick bottom oxide Electricity 1 Active
US10269953B2 Semiconductor device having a trench gate Electricity 1 Active
US10629595B2 Power semiconductor device having different gate crossings, and method for manufacturing thereof Electricity 1 Active
US9755066B2 Reduced gate charge field-effect transistor Electricity 1 Active
US10872957B2 Semiconductor device with needle-shaped field plate structures Electricity 1 Active
US11296218B2 Semiconductor device Electricity 0 Active
US10205015B2 Reduced gate charge field-effect transistor Electricity 0 Active
US10868173B2 Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof Electricity 0 Active
US9972714B2 Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures Electricity 0 Active
US11251275B2 Needle cell trench MOSFET Electricity 0 Active
US9799738B2 Semiconductor device with field electrode and contact structure Electricity 0 Active
US12230706B2 Transistor device having a cell field and method of fabricating a gate of the transistor device Electricity 0 Active
US9728614B2 Semiconductor device comprising a field electrode Electricity 0 Active
US11764272B2 Semiconductor device and method of manufacturing the same Electricity 0 Active
US9536960B2 Semiconductor device comprising a field electrode Electricity 0 Active
US10811531B2 Transistor device with gate resistor Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.