Multilayered spacer structure for a magnetic tunneling junction and method of manufacturing

US10270026B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Harry-Hak-Lay Chuang · Austin, US
• Sheng-Huang Huang · Hsinchu, TW
• Hung Cho Wang · Taipei, TW

Key dates

• Filing date: Feb 24, 2017
• Grant date: Apr 23, 2019
• Expiry date: Feb 24, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/20

Abstract

A semiconductor structure is disclosed. The semiconductor structure includes: an Nth metal layer; a bottom electrode over the Nth metal layer; a magnetic tunneling junction (MTJ) over the bottom electrode; a top electrode over the MTJ; a spacer, including: a first spacer layer including SiN with a first atom density, the first spacer layer laterally encompassing the MTJ; and a second spacer layer including SiN with a second atom density different from the first atom density, the second spacer layer laterally encompassing at least a portion of the first spacer layer; and an (N+1)th metal layer over the top electrode. A method for manufacturing a semiconductor structure is also disclosed.