Self-generating AC current assist in orthogonal STT-MRAM
US10270027B1 · kind B1 · utility
21Cited by
147References
46Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 29, 2017 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Dec 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and structures useful for magnetoresistive random-access memory (MRAM) are disclosed. The MRAM device has a magnetic tunnel junction stack having a significantly improved performance of the free layer in the magnetic tunnel junction structure. The MRAM device utilizes a STNO, an in-plane polarization magnetic layer, and a perpendicular MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.