Transistors having on-chip integrated photon source or photonic-ohmic drain to facilitate de-trapping electrons trapped in deep traps of transistors
US10270436B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2015 |
| Grant date | Apr 23, 2019 |
| Priority date | — |
| Expiry date | Nov 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Techniques are provided that pumping of deep traps in GaN electronic devices using photons from an on-chip photon source. In various embodiments, a method for optical pumping of deep traps in GaN HEMTs is provided using an on-chip integrated photon source that is configured to generate photons during operation of the HEMT. In an aspect, the on-chip photon source is a SoH-LED. In various additional embodiments, an integration scheme is provided that integrates the photon source into the drain electrode of a HEMT, thereby converting the conventional HEMT with an ohmic drain to a transistor with hybrid photonic-ohmic drain (POD), a POD transistor or PODFET for short.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.