Inventor · Hong Kong, CN

Jing Chen

25Patents
5h-index
20Co-inventors
65Inventor score

Filing activity: Nov 29, 2006 → Nov 29, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US7932539B2 Enhancement-mode III-N devices, circuits, and methods Electricity 55 Active
US8502323B2 Reliable normally-off III-nitride active device structures, and related methods and systems Electricity 38 Active
US7972915B2 Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs Electricity 27 Active
US8044432B2 Low density drain HEMTs Electricity 13 Active
US8564020B2 Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same Electricity 10 Active
US8937336B2 Passivation of group III-nitride heterojunction devices Electricity 5 Active
US8809987B2 Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors Electricity 5 Active
US10404251B2 Power device with integrated gate driver Electricity 4 Active
US10270436B2 Transistors having on-chip integrated photon source or photonic-ohmic drain to facilitate de-trapping electrons trapped in deep traps of transistors Electricity 4 Active
US9160326B2 Gate protected semiconductor devices Electricity 2 Active
US11935950B2 High voltage transistor structure Electricity 1 Active
US10553687B2 Semiconductor device having conductive feature overlapping an edge of an active region Electricity 1 Active
US9799766B2 High voltage transistor structure and method Electricity 1 Active
US11107916B2 High voltage transistor structure Electricity 1 Active
US11705511B2 Metal-insulator-semiconductor transistors with gate-dielectric/semiconductor interfacial protection layer Electricity 0 Active
US10269959B2 High voltage transistor structure and method Electricity 0 Active
US11476325B2 Semiconductor device Electricity 0 Active
US12119384B2 Semiconductor device having conductive field plate overlapping an edge of an active region Electricity 0 Active
US11527624B2 Method of manufacturing a semiconductor device having a conductive field plate and a first well Electricity 0 Active
US11894362B2 PNP controlled ESD protection device with high holding voltage and snapback Electricity 0 Active
US10290714B2 Transistor structure with field plate for reducing area thereof Electricity 0 Active
US11139374B2 Field-effect transistors with semiconducting gate Electricity 0 Active
US10505032B2 Semiconductor device with III-nitride channel region and silicon carbide drift region Electricity 0 Active
US9761494B2 Semiconductor structure and method of forming the same Electricity 0 Active
US9337028B2 Passivation of group III-nitride heterojunction devices Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.