Mask and photolithography system
US10274817B2 · kind B2 · utility
1Cited by
18References
13Claims
0Family size
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Key dates
| Filing date | Mar 31, 2017 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Mar 31, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask includes a transparent substrate, a first pattern, a second pattern, and a sub-resolution auxiliary feature. The first pattern and the second pattern are over the transparent substrate. The first pattern has an area of 0.16 μm2 to 60000 μm2. The second pattern has an area of 0.16 μm2 to 60000 μm2. The sub-resolution auxiliary feature is over the transparent substrate and connects the first pattern and the second pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.