Low interface state device and method for manufacturing the same
US10276366B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Aug 7, 2015 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Mar 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a low interface state device includes performing a remote plasma surface process on a III-Nitride layer on a substrate; transferring the processed substrate to a deposition cavity via an oxygen-free transferring system; and depositing on the processed substrate in the deposition cavity. The deposition may be low pressure chemical vapor deposition (LPCVD). The interface state between a surface dielectric and III-Nitride material may be significantly decreased by integrating a low impairment remote plasma surface process and LPCVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.