Method for improving wafer surface uniformity
US10276367B1 · kind B1 · utility
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8Claims
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Key dates
| Filing date | Jan 9, 2018 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Jan 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for improving wafer surface uniformity is disclosed. A wafer including a first region and a second region is provided. The first region and the second region have different pattern densities. A conductive layer is formed on the wafer. A buffer layer is then formed on the conductive layer. The buffer layer is polished until the conductive layer is exposed. A portion of the conductive layer and the remaining buffer layer are etched away.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.