Method of manufacturing a semiconductor device
US10276373B2 · kind B2 · utility
1Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2017 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Apr 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device includes forming an etch target layer on a semiconductor substrate, forming a first photoresist pattern disposed on the etch target layer, irradiating ultraviolet (UV) light in an oxygen-containing atmosphere to remove the first photoresist pattern from the etch target layer, and forming a second photoresist pattern on the etch target layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.