Method of forming oxide layer for FinFET device
US10276444B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2017 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Oct 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a fin-based transistor includes forming a fin on a substrate; overlaying at least an upper portion of the fin with nitrogen-based radicals, wherein the nitrogen-based radicals are distributed along a sidewall and over a top surface of the upper portion of the fin with respective different concentrations; and forming an oxide layer over the upper portion of the fin using a thermal oxidation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.