Ching-Hua Lee
21Patents
3h-index
36Co-inventors
63Inventor score
Filing activity: Oct 16, 2001 → Mar 21, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8203455B2 | Posture sensing alert apparatus | Human Necessities | 6 | Active |
| US6679964B2 | Method for integrating image sensors with optical components | Emerging Cross-Sectional Technologies | 4 | Expired |
| US8548606B2 | Apparatus and method for managing tasks in an industrial plant | Physics | 3 | Active |
| US11251268B2 | Semiconductor device with doped structure | Electricity | 2 | Active |
| US11695055B2 | Passivation layers for semiconductor devices | Electricity | 1 | Active |
| US11133222B2 | Method for manufacturing semiconductor structure | Electricity | 1 | Active |
| US9429938B2 | Method and apparatus for qualifying performance of a conventional control valve | Physics | 1 | Active |
| US10860012B2 | KPI calculation rule builder for advance plant monitoring and diagnostics | Physics | 1 | Active |
| US11942376B2 | Method for manufacturing semiconductor structure | Electricity | 0 | Active |
| US10902837B2 | Sparsity-aware adaptive feedback cancellation | Physics | 0 | Active |
| US12260874B2 | Speech denoising networks using speech and noise modeling | Physics | 0 | Active |
| US11450571B2 | Method for manufacturing semiconductor structure | Electricity | 0 | Active |
| US12288809B2 | Semiconductor device with doped structure | Electricity | 0 | Active |
| US11849283B2 | Mitigating acoustic feedback in hearing aids with frequency warping by all-pass networks | Electricity | 0 | Active |
| US11990512B2 | Semiconductor device with doped structure | Electricity | 0 | Active |
| US11232953B2 | Method of manufacturing a semiconductor device and a semiconductor device | Electricity | 0 | Active |
| US11676867B2 | Method for manufacturing semiconductor structure | Electricity | 0 | Active |
| US12243934B2 | Channel structures including doped 2D materials for semiconductor devices | Electricity | 0 | Active |
| US11929422B2 | Passivation layers for semiconductor devices | Electricity | 0 | Active |
| US12100755B2 | Channel structures including doped 2D materials for semiconductor devices | Electricity | 0 | Active |
| US10276444B2 | Method of forming oxide layer for FinFET device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.