Semiconductor device and method of forming the same
US10276476B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2018 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | May 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of forming the semiconductor device are provided. The semiconductor device includes a substrate, an interconnection structure, an oxide semiconductor (OS) transistor and a contact structure. The substrate has a first surface and a second surface opposite to the first surface. The interconnection structure is disposed on the first surface, and the oxide semiconductor (OS) transistor is disposed on the second surface. Also, the OS transistor includes a back gate disposed on the second surface of the substrate. The contact structure is formed between the OS transistor and the interconnection structure, and the contact structure is electrically connected to the back gate. The contact structure penetrates through the substrate for electrically connecting the interconnection structure to the OS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.