Patent · US Active

Interconnect structure with air-gaps

US10276498B2 · kind B2 · utility

2Cited by
5References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 22, 2017
Grant dateApr 30, 2019
Priority date
Expiry dateDec 22, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In some embodiments, the present disclosure relates to an interconnect structure. The interconnect structure has a first dielectric layer disposed over a substrate and a conductive structure arranged within the first dielectric layer. An air-gap separates sidewalls of the conductive structure from the first dielectric layer. The air-gap continuously extends from a first side of the conductive structure to an opposing second side of the conductive structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.