Preclean and deposition methodology for superconductor interconnects
US10276504B2 · kind B2 · utility
2Cited by
38References
20Claims
0Family size
Assignee
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Key dates
| Filing date | May 17, 2017 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | May 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/0156
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided of forming a superconductor interconnect structure. The method comprises forming a dielectric layer overlying a substrate, forming an interconnect opening in the dielectric layer, and moving the substrate to a deposition chamber. The method further comprises performing a cleaning process on the top surface of the dielectric layer and in the interconnect opening while in the deposition chamber, and depositing a superconducting metal in the interconnect opening while in the deposition chamber to form a superconducting element in the superconductor interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.