Three-dimensional memory device containing composite word lines including a metal silicide and an elemental metal and method of making thereof
US10276583B2 · kind B2 · utility
37Cited by
51References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2017 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Oct 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Word lines for a three-dimensional memory device can be formed by forming a stack of alternating layers comprising insulating layers and sacrificial material layers and memory stack structures vertically extending therethrough. Backside recesses are formed by removing the sacrificial material layers through a backside via trench. A metal silicide layer and metal portion are formed in the backside recesses to form the word lines including a metal portion, a metal silicide layer, and optionally, a silicon-containing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.