Plasma treatment for thin film resistors on integrated circuits
US10276648B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2017 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Dec 27, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P80/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating ICs including thin film resistors (TFRs) depositing a dielectric liner layer on a substrate including a semiconductor surface having a plurality of IC die formed therein each including functional circuitry comprising a plurality of interconnected transistors. A TFR layer comprising chromium (Cr) is deposited on the dielectric liner layer. The TFR layer is plasma treated with atomic nitrogen and atomic hydrogen. A dielectric capping layer is deposited on the TFR layer after the plasma treating. A pattern is formed on the capping layer, and the TFR layer is etched to form at least one resistor that comprises the TFR layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.