Semiconductor devices and methods for forming semiconductor devices
US10276670B2 · kind B2 · utility
0Cited by
7References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 2017 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | May 12, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an array of needle-shaped trenches extending into a semiconductor substrate. The semiconductor device further includes a gate trench grid extending into the semiconductor substrate. A gate electrode of a transistor structure is located within the gate trench grid. A gate wiring structure of the transistor structure is connected to the gate electrode of the transistor structure. A field electrode located within at least one needle-shaped trench of the array of needle-shaped trenches is connected to the gate wiring structure of the transistor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.