Inventor · Villach, AT

Li Juin Yip

30Patents
3h-index
19Co-inventors
56Inventor score

Filing activity: Nov 9, 2012 → Apr 5, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9443973B2 Semiconductor device with charge compensation region underneath gate trench Electricity 5 Active
US9680004B2 Power MOSFET with seperate gate and field plate trenches Electricity 5 Active
US10510846B2 Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination region Electricity 3 Active
US9105713B2 Semiconductor device with metal-filled groove in polysilicon gate electrode Electricity 2 Active
US9190480B2 Method and contact structure for coupling a doped body region to a trench electrode of a semiconductor device Electricity 1 Active
US10727331B2 Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereof Electricity 1 Active
US9755066B2 Reduced gate charge field-effect transistor Electricity 1 Active
US10872957B2 Semiconductor device with needle-shaped field plate structures Electricity 1 Active
US10629595B2 Power semiconductor device having different gate crossings, and method for manufacturing thereof Electricity 1 Active
US10453929B2 Methods of manufacturing a power MOSFET Electricity 0 Active
US10573731B2 Semiconductor transistor and method for forming the semiconductor transistor Electricity 0 Active
US10276670B2 Semiconductor devices and methods for forming semiconductor devices Electricity 0 Active
US11670684B2 Semiconductor transistor device and method of manufacturing the same Electricity 0 Active
US11764272B2 Semiconductor device and method of manufacturing the same Electricity 0 Active
US10868173B2 Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof Electricity 0 Active
US10050113B2 Semiconductor device with needle-shaped field plates and a gate structure with edge and node portions Electricity 0 Active
US10199456B2 Method of manufacturing a semiconductor device having a charge compensation region underneath a gate trench Electricity 0 Active
US10177250B2 Method of manufacturing a semiconductor device with a metal-filled groove in a polysilicon gate electrode Electricity 0 Active
US10903321B2 Semiconductor device and method of manufacturing a semiconductor device using an alignment layer Electricity 0 Active
US9768290B2 Semiconductor device with metal-filled groove in polysilicon gate electrode Electricity 0 Active
US9899488B2 Semiconductor device having a trench with different electrode materials Electricity 0 Active
US11462620B2 Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures Electricity 0 Active
US12166080B2 Semiconductor transistor device having a titled body contact area and method of manufacturing the same Electricity 0 Active
US11296218B2 Semiconductor device Electricity 0 Active
US10453931B2 Semiconductor device having termination trench Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.