Symmetrical lateral bipolar junction transistor and use of same in characterizing and protecting transistors
US10276700B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2018 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Apr 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A symmetrical lateral bipolar junction transistor (SLBJT) is provided. The SLBJT includes a p-type semiconductor substrate, a n-type well, an emitter of a SLBJT situated in the n-type well, a base of the SLBJT situated in the n-type well and spaced from the emitter by a distance on one side of the base, a collector of the SLBJT situated in the n-type well and spaced from the base by the distance on an opposite side of the base, and an electrical connection to the substrate outside the n-type well. The SLBJT is used to characterize a transistor in a circuit by electrically coupling the SLBJT to a gate of the test transistor, applying a voltage to the gate, and characterizing aspect(s) of the test transistor under the applied voltage. The SLBJT protects the gate against damage to the gate dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.