Fin field effect transistor and method for fabricating the same
US10276715B2 · kind B2 · utility
3Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2016 |
| Grant date | Apr 30, 2019 |
| Priority date | — |
| Expiry date | Jun 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin field effect transistor (FinFET) is provided. The FinFET includes a substrate, a gate stack, and strained source and drain regions. The substrate has a semiconductor fin. The gate stack is disposed across the semiconductor fin. Moreover, the strained source and drain regions are located within recesses of the semiconductor fin beside the gate stack. Moreover, at least one of the strained source and drain regions has a top portion and a bottom portion, the bottom portion is connected to the top portion, and a bottom width of the top portion is greater than a top width of the bottom portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.