Photovoltaic cell, including a crystalline silicon oxide passivation thin film, and method for producing same

US10276738B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Pierre Mur · Crolles, FR
• Hubert Moriceau · Saint-Égrève, FR
• Pierre-Jean Ribeyron · Meylan, FR

Key dates

• Filing date: Jan 26, 2011
• Grant date: Apr 30, 2019
• Expiry date: Jan 26, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A heterojunction photovoltaic cell includes at least one crystalline silicon oxide film directly placed onto one of the front or rear faces of a crystalline silicon substrate, between said substrate and a layer of amorphous or microcrystalline silicon. The thin film is intended to enable the passivation of said face of the substrate. The thin film is more particularly obtained by radically oxidizing a surface portion of the substrate, before depositing the layer of amorphous silicon. Moreover, a thin layer of intrinsic or microdoped amorphous silicon can be placed between said think film and the layer of amorphous or microcrystalline silicon.