Radiation-emitting semiconductor chip, method for producing a plurality of radiation-emitting semiconductor chips and optoelectronic component having a radiation-emitting semiconductor chip

US10276748B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Mathias Kaempf · Burglengenfeld, DE
• Simon Jerebic · Regensburg, DE
• Ingo Neudecker · Regensburg, DE
• Guenter Spath · Regensburg, DE
• Michael Huber · Bad Abbach, DE
• Korbinian Perzlmaier · Regensburg, DE

Key dates

• Filing date: Oct 7, 2015
• Grant date: Apr 30, 2019
• Expiry date: Dec 27, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/819

Abstract

Disclosed is a radiation-emitting semi-conductor chip (1) comprising an epitaxial semi-conductor layer sequence (3) which emits electromagnetic radiation in operation. The epitaxial semi-conductor layer sequence (3) is applied on a a transparent substrate (4), wherein the substrate (4) has a first main surface (8) facing the semi-conductor layer sequence (3), a second main surface (9) facing away from the semi-conductor layer sequence (3) and a first lateral flank (10) arranged between the first main surface (8) and the second main surface (9), and the lateral flank (10) has a decoupling structure which is formed in a targeted manner from separating tracks. Also disclosed is a method for producing the semi-conductor chip, and a component comprising such a semi-conductor chip.