Integrated anisotropic magnetoresistive device

US10276787B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Dok Won Lee · Mountain View, US
• William French · San Jose, US
• Ricky Alan Jackson · Richardson, US
• Fuchao Wang · Plano, US

Key dates

• Filing date: Feb 11, 2016
• Grant date: Apr 30, 2019
• Expiry date: Feb 11, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N59/00

Abstract

An integrated device includes a substrate having a semiconductor surface layer including functional circuitry, a lower metal stack on the semiconductor surface layer, an interlevel dielectric (ILD) layer on the lower metal stack, a top metal layer providing AMR contact pads and bond pads coupled to the AMR contact pads in the ILD layer. An AMR device is above the lower metal stack lateral to the functional circuitry including a patterned AMR stack including a seed layer, an AMR material layer, and a capping layer, wherein the seed layer is coupled to the AMR contact pads by a coupling structure. A protective overcoat (PO layer) is over the AMR stack. There are openings in the PO layer exposing the bond pads.