Fuchao Wang
30Patents
6h-index
26Co-inventors
69Inventor score
Filing activity: Jun 15, 2000 → Sep 28, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8927909B2 | Closed loop temperature controlled circuit to improve device stability | Electricity | 26 | Active |
| US8242876B2 | Dual thin film precision resistance trimming | Emerging Cross-Sectional Technologies | 19 | Active |
| US6953925B2 | Microlens integration | Electricity | 13 | Expired |
| US8493171B2 | Dual thin film precision resistance trimming | Emerging Cross-Sectional Technologies | 10 | Active |
| US7881594B2 | Heating system and method for microfluidic and micromechanical applications | Emerging Cross-Sectional Technologies | 6 | Active |
| US6350684B1 | Graded/stepped silicide process to improve MOS transistor | Electricity | 6 | Expired |
| US9165853B2 | Closed loop temperature controlled circuit to improve device stability | Electricity | 3 | Active |
| US8110117B2 | Method to form a recess for a microfluidic device | Performing Operations; Transporting | 2 | Active |
| US6586320B2 | Graded/stepped silicide process to improve mos transistor | Electricity | 2 | Expired |
| US10206247B2 | Closed loop temperature controlled circuit to improve device stability | Electricity | 2 | Active |
| US9305688B2 | Single photomask high precision thin film resistor | Emerging Cross-Sectional Technologies | 1 | Active |
| US9059174B2 | Method to reduce metal fuse thickness without extra mask | Emerging Cross-Sectional Technologies | 1 | Active |
| US10403424B2 | Method to form magnetic core for integrated magnetic devices | Electricity | 1 | Active |
| US11140750B2 | Closed loop temperature controlled circuit to improve device stability | Electricity | 0 | Active |
| US7514714B2 | Thin film power MOS transistor, apparatus, and method | Electricity | 0 | Expired |
| US9434166B2 | Heating system and method for microfluidic and micromechanical applications | Emerging Cross-Sectional Technologies | 0 | Active |
| US10068769B2 | Methods and apparatus for preventing counter-doping during high temperature processing | Electricity | 0 | Active |
| US7465660B2 | Graded/stepped silicide process to improve MOS transistor | Electricity | 0 | Expired |
| US9842895B2 | Single photomask high precision thin film resistor | Emerging Cross-Sectional Technologies | 0 | Active |
| US10654714B2 | Heating system and method for microfluidic and micromechanical applications | Emerging Cross-Sectional Technologies | 0 | Active |
| US7964474B2 | Use of field oxidation to simplify chamber fabrication in microfluidic devices | Physics | 0 | Active |
| US9899334B1 | Methods and apparatus for alignment marks | Electricity | 0 | Active |
| US12069956B2 | Thin film anisotropic magnetoresistor device and formation | Electricity | 0 | Active |
| US11856657B2 | Closed loop temperature controlled circuit to improve device stability | Electricity | 0 | Active |
| US10276787B2 | Integrated anisotropic magnetoresistive device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.