Silicon nitride film and method of making thereof
US10280084B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 17, 2014 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Nov 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of reducing carbon and/or hydrogen atom content ratio relative to contents of silicon atoms and nitrogen atoms in a silicon nitride film formed by a plasma CVD method using an organic silane as a material, and improving film quality such as electrical properties. A silicon nitride film is formed with the organic silane and at least one additive gas selected from a group consisting of hydrogen and ammonia by a plasma CVD method. The silicon nitride film has a carbon atom content ratio of less than 0.8 assuming that a sum of a silicon atom content and a nitrogen atom content in the silicon nitride film is 1. The silicon nitride film has improved properties such as reduced leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.