Patent · US Active

Method of manufacture of free standing microwave plasma CVD polycrystalline diamond films with major dimensions on the order of one wavelength of the utilized microwave

US10280511B2 · kind B2 · utility

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1References
3Claims
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Assignee

Inventors

Key dates

Filing dateMar 2, 2017
Grant dateMay 7, 2019
Priority date
Expiry dateMar 2, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32642
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. A method of microwave plasma CVD growth of a diamond film on the substrate is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.