Patent assignee · US · COMPANY

II-VI Incorporated

71Patents
62Active
71Granted
55Portfolio score

Filing activity: Oct 7, 1977 → May 8, 2018 · 9 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US9310564B2 Multiport tunable optical filters Electricity 26 Active
US6805745B2 Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals Chemistry; Metallurgy 20 Expired
US9645291B1 Voltage-tunable optical filters for instrumentation applications Physics 13 Active
US10209447B2 Micro splice protector Physics 13 Active
US7608524B2 Method of and system for forming SiC crystals having spatially uniform doping impurities Emerging Cross-Sectional Technologies 12 Active
US7767022B1 Method of annealing a sublimation grown crystal Chemistry; Metallurgy 10 Active
US6800136B2 Axial gradient transport apparatus and process Emerging Cross-Sectional Technologies 9 Expired
US9469918B2 Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon Emerging Cross-Sectional Technologies 8 Active
US8216369B2 System for forming SiC crystals having spatially uniform doping impurities Emerging Cross-Sectional Technologies 8 Active
US8512471B2 Halosilane assisted PVT growth of SiC Chemistry; Metallurgy 7 Active
US10294584B2 SiC single crystal sublimation growth method and apparatus Chemistry; Metallurgy 7 Active
US8792091B2 Embedded optical time domain reflectometer for optically amplified links Physics 6 Active
US8858709B1 Silicon carbide with low nitrogen content and method for preparation Chemistry; Metallurgy 6 Active
US6909100B2 Radiation detector assembly Electricity 5 Expired
US9503181B2 Rare earth-doped fiber amplifier with integral optical metrology functionality Electricity 5 Active
US9228274B2 Axial gradient transport growth process and apparatus utilizing resistive heating Chemistry; Metallurgy 4 Active
US8313720B2 Guided diameter SiC sublimation growth with multi-layer growth guide Chemistry; Metallurgy 4 Active
US9090989B2 Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof Electricity 4 Active
US8644357B2 High reliability laser emitter modules Electricity 4 Active
US8361227B2 Silicon carbide single crystals with low boron content Chemistry; Metallurgy 4 Active
US6899761B2 Single crystals of lead magnesium niobate-lead titanate Chemistry; Metallurgy 4 Expired
US6927396B2 High-speed pulse discriminating gamma ray camera Physics 4 Expired
US9494484B2 In-service optical time domain reflectometry utilizing raman pump source Electricity 4 Active
US10148383B2 Optical channel monitor with integral optical switch Electricity 4 Active
US9575340B2 Electrode configuration for electro-optic modulators Physics 3 Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.