Lateral GaN PN junction diode enabled by sidewall regrowth
US10283358B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | May 15, 2018 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | May 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Lateral PN junctions and diodes and transistors comprising lateral PN junctions and methods used in making such devices are disclosed. A method of fabricating a lateral PN junction, can comprise: conformally growing p−GaN material on a n−GaN vertical surface extending vertically from an n−GaN horizontal surface on an n−GaN drift layer to form a first PN junction, wherein the n−GaN horizontal surface extends horizontally from the n−GaN vertical surface and the n−GaN horizontal surface has a layer of dielectric material formed on the n−GaN horizontal surface that extends from the p−GaN surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.