Yu Cao
31Patents
5h-index
39Co-inventors
65Inventor score
Filing activity: Nov 9, 2009 → Jun 28, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9559012B1 | Gallium nitride complementary transistors | Electricity | 16 | Active |
| US10193465B2 | DC/DC conversion apparatus | Emerging Cross-Sectional Technologies | 11 | Active |
| US9812532B1 | III-nitride P-channel transistor | Electricity | 10 | Active |
| US8966329B2 | Fast parallel test of SRAM arrays | Physics | 9 | Active |
| US10903333B2 | Doped gate dielectric materials | Electricity | 5 | Active |
| US9667152B2 | Power conversion system and power conversion method | Electricity | 4 | Active |
| US10571763B2 | Array substrate and electronic device | Physics | 2 | Active |
| US9076812B2 | HEMT structure with iron-doping-stop component and methods of forming | Electricity | 2 | Active |
| US10651306B2 | Digital alloy based back barrier for P-channel nitride transistors | Electricity | 1 | Active |
| US10014782B2 | DC/DC conversion apparatus | Emerging Cross-Sectional Technologies | 1 | Active |
| US9667161B2 | Power converter and method for controlling power converter that adjust duty cycle of switching circuit based on input voltage | Electricity | 1 | Active |
| US10062342B2 | Liquid crystal display (LCD) Q-panel, LCD panel and LCD apparatus | Physics | 0 | Active |
| US9966858B2 | DC-DC converting apparatus for obtaining a constant output voltage | Emerging Cross-Sectional Technologies | 0 | Active |
| US10134851B2 | Tunnel barrier schottky | Electricity | 0 | Active |
| US12204184B2 | Structure for an optoelectronics platform and method of fabricating a structure for an optoelectronics platform | Physics | 0 | Active |
| US9899482B2 | Tunnel barrier schottky | Electricity | 0 | Active |
| US10000738B2 | Usage of odontogenic stem cells and genetically modified odontogenic stem cells | Chemistry; Metallurgy | 0 | Active |
| US10943998B2 | Digital alloy based back barrier for P-channel nitride transistors | Electricity | 0 | Active |
| US8022737B2 | Electronic device and delay circuit thereof | Electricity | 0 | Active |
| US11437485B2 | Doped gate dielectrics materials | Electricity | 0 | Active |
| US10847858B2 | Method for manufacturing circulators with improved performance | Electricity | 0 | Active |
| US10283358B2 | Lateral GaN PN junction diode enabled by sidewall regrowth | Electricity | 0 | Active |
| US11158830B2 | Perovskite film layer, device and preparation method for effectively improving efficiency of light-emitting device | Electricity | 0 | Active |
| US10535518B1 | In situ fabrication of horizontal nanowires and device using same | Emerging Cross-Sectional Technologies | 0 | Active |
| US10937650B1 | Semiconductor device having in situ formed horizontal nanowire structure | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.