Self-protective layer formed on high-k dielectric layers with different materials
US10283417B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2017 |
| Grant date | May 7, 2019 |
| Priority date | — |
| Expiry date | Dec 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28185
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device structures having metal gate structures with tunable work function values are provided. In one example, a semiconductor device includes a first gate structure and a second gate structure on a substrate; wherein the first gate structure includes a first gate dielectric layer having a first material, and the second gate structure includes a second gate dielectric layer having a second material, the first material being different from the second material, wherein the first and the second gate structures further includes a first and a second self-protective layers disposed on the first and the second gate dielectric layers respectively, wherein the first self-protective layer includes metal phosphate and the second self-protective layer includes boron including complex agents and a first work function tuning layer on the first self-protective layer in the first gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.