Power semiconductor module with partially coated power terminals and method of manufacturing thereof

US10283447B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Torsten Groening · Paderborn, DE
• Thomas Nuebel · Warstein, DE
• Reinhold Spanke · Bestwig, DE

Key dates

• Filing date: Oct 26, 2017
• Grant date: May 7, 2019
• Expiry date: Oct 26, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/186
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A power semiconductor module includes one or more power semiconductor dies attached to a first main face of a substrate, a plastic housing attached to the substrate, which together with the substrate encloses the one or more power semiconductor dies, a plurality of power terminals attached to the first main face of the substrate at a first end, and extending through the plastic housing at a second end to provide a point of external electrical connection for the one or more power semiconductor dies, a potting compound embedding the one or more power semiconductor dies, the first main face of the substrate and at least part of the first end of the plurality of power terminals, and an insulative coating applied only to parts of the plurality of power terminals disposed inside the plastic housing and in contact with just air. A corresponding method of manufacture also is provided.